Mitsubishi Electric said it has developed dye-transistors nitride gallium main motion detectors (Score HEMT) for the 4.0 GHz band satellite programming is produced from 2-100 W. W.
The company said gallium nitride (cut) amplifiers provide high-speed electrons and HEMT and offers details on the gallium arsenide (GaAs amplifiers) which are used traditionally.
MGFC50G3742S power output HEMT is cut to 100 W, which said the company has a single, while maintaining the same size as amplifiers 25 GaAs W.
Mitsubishi Electric has developed with the HEMT amplifiers rated 40 W, 20 W and W 2 results appropriate for use in support of and during the first phase.
HEMTs can cut work hours to as long as 1 million chip temperature of 175 degrees C and voltage 45 V operation and can work in harsh conditions found in space.
